Invention Application
- Patent Title: FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME
- Patent Title (中): 场效应晶体管结构及其形成方法
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Application No.: US13108305Application Date: 2011-05-16
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Publication No.: US20120292669A1Publication Date: 2012-11-22
- Inventor: Panglijen Candra , Richard A. Phelps , Robert M. Rassel , Yun Shi
- Applicant: Panglijen Candra , Richard A. Phelps , Robert M. Rassel , Yun Shi
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/336
Abstract:
The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.
Public/Granted literature
- US08618583B2 Junction gate field effect transistor structure having n-channel Public/Granted day:2013-12-31
Information query
IPC分类:
