发明申请
- 专利标题： MANUFACTURING METHOD FOR METAL GATE STRUCTURE
- 专利标题（中）： 金属结构的制造方法
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申请号： US13086410申请日： 2011-04-14
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公开(公告)号： US20120264284A1公开(公告)日： 2012-10-18
- 发明人: Shao-Wei Wang , Ying-Wei Yen , Yu-Ren Wang , Chien-Liang Lin
- 申请人： Shao-Wei Wang , Ying-Wei Yen , Yu-Ren Wang , Chien-Liang Lin
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A manufacturing method for a metal gate structure includes providing a substrate having a gate trench formed thereon, forming a work function metal layer in the gate trench, and performing an annealing process to the work function metal layer. The annealing process is performed at a temperature between 400° C. and 500° C., and in a bout 20 seconds to about 180 seconds.
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