发明申请
US20120228665A1 METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
审中-公开
制造基于氮化镓的化合物半导体发光装置的方法，基于氮化镓的化合物半导体发光装置和灯
- 专利标题： METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
- 专利标题（中）： 制造基于氮化镓的化合物半导体发光装置的方法，基于氮化镓的化合物半导体发光装置和灯
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申请号： US13480373申请日： 2012-05-24
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公开(公告)号： US20120228665A1公开(公告)日： 2012-09-13
- 发明人: Naoki FUKUNAGA , Hiroshi OSAWA
- 申请人： Naoki FUKUNAGA , Hiroshi OSAWA
- 申请人地址： JP Tokyo
- 专利权人： SHOWA DENKO K.K.
- 当前专利权人： SHOWA DENKO K.K.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-119207 20060424
- 主分类号： H01L33/42
- IPC分类号： H01L33/42 ; H01L33/32
摘要：
Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film (15) including a dopant is laminated on a p-type semiconductor layer (14) of a gallium nitride-based compound semiconductor device (1). The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film (15).
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