发明申请
- 专利标题： METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13363673申请日： 2012-02-01
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公开(公告)号： US20120129356A1公开(公告)日： 2012-05-24
- 发明人: Jin-Gyun KIM , Bon-young Koo , Ki-hyun Hwang
- 申请人： Jin-Gyun KIM , Bon-young Koo , Ki-hyun Hwang
- 优先权： KR10-2007-0078706 20070608
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of forming a dielectric layer having an air gap to isolate adjacent wirings or a gate stack of the semiconductor device is provided. A method of fabricating a semiconductor device includes providing a semiconductor substrate on which a plurality of wirings are formed adjacent to one another and forming a dielectric layer filling an upper portion of a space between the adjacent wirings to form air gaps by a thermal chemical vapor deposition method.
公开/授权文献
- US08563421B2 Method of fabricating semiconductor device 公开/授权日：2013-10-22
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