Invention Application
US20120126399A1 THERMALLY ENHANCED SEMICONDUCTOR ASSEMBLY WITH BUMP/BASE/FLANGE HEAT SPREADER AND BUILD-UP CIRCUITRY
审中-公开
带有BUF / BASE /法兰散热器和建立电路的热增强半导体组件
- Patent Title: THERMALLY ENHANCED SEMICONDUCTOR ASSEMBLY WITH BUMP/BASE/FLANGE HEAT SPREADER AND BUILD-UP CIRCUITRY
- Patent Title (中): 带有BUF / BASE /法兰散热器和建立电路的热增强半导体组件
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Application No.: US13197163Application Date: 2011-08-03
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Publication No.: US20120126399A1Publication Date: 2012-05-24
- Inventor: Charles W. C. LIN , Chia-Chung WANG
- Applicant: Charles W. C. LIN , Chia-Chung WANG
- Applicant Address: TW Taipei City
- Assignee: Bridge Semiconductor Corporation
- Current Assignee: Bridge Semiconductor Corporation
- Current Assignee Address: TW Taipei City
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A semiconductor assembly includes a semiconductor device, a heat spreader, an adhesive and a build-up circuitry. The heat spreader includes a bump, a base and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the build-up circuitry and thermally connected to the bump. The bump extends from the base into an opening in the adhesive, the base extends vertically from the bump opposite the cavity and the flange extends laterally from the bump at the cavity entrance. The build-up circuitry includes a dielectric layer and conductive traces on the semiconductor device and the flange. The conductive traces provide signal routing for the semiconductor device.
Information query
IPC分类: