Invention Application
US20120104462A1 SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE
有权
SEMICONDUCTOR WAFER,METHOD OF PRODUCTION SEMICONDUCTOR WAFER,AND ELECTRONIC DEVICE
- Patent Title: SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE
- Patent Title (中): SEMICONDUCTOR WAFER,METHOD OF PRODUCTION SEMICONDUCTOR WAFER,AND ELECTRONIC DEVICE
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Application No.: US13301279Application Date: 2011-11-21
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Publication No.: US20120104462A1Publication Date: 2012-05-03
- Inventor: Osamu ICHIKAWA
- Applicant: Osamu ICHIKAWA
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2009-126761 20090526
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/20 ; H01L29/205

Abstract:
A semiconductor wafer includes a first semiconductor, and a second semiconductor formed directly or indirectly on the first semiconductor. The second semiconductor contains a first impurity atom exhibiting p-type or n-type conductivity, and a second impurity atom selected such that the Fermi level of the second semiconductor containing both the first and second impurity atoms is closer to the Fermi level of the second semiconductor containing neither the first impurity atom nor the second impurity atom, than the Fermi level of the second semiconductor containing the first impurity atom is. For example, the majority carrier of the second semiconductor is an electron, and the Fermi level of the second semiconductor containing the first and second impurity atoms is lower than the Fermi level of the second semiconductor containing the first impurity atom.
Public/Granted literature
- US08872231B2 Semiconductor wafer, method of producing semiconductor wafer, and electronic device Public/Granted day:2014-10-28
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