发明申请
US20120091452A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE
有权
氧化物半导体，薄膜晶体管阵列基板及其制造方法及显示装置
- 专利标题： OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE
- 专利标题（中）： 氧化物半导体，薄膜晶体管阵列基板及其制造方法及显示装置
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申请号： US13377824申请日： 2010-03-10
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公开(公告)号： US20120091452A1公开(公告)日： 2012-04-19
- 发明人: Yoshifumi Ohta , Go Mori , Hirohiko Nishiki , Yoshimasa Chikama , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Takeshi Hara
- 申请人： Yoshifumi Ohta , Go Mori , Hirohiko Nishiki , Yoshimasa Chikama , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Takeshi Hara
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2009-154104 20090629
- 国际申请： PCT/JP2010/053987 WO 20100310
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/34
摘要：
The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.
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