Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US12902159Application Date: 2010-10-12
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Publication No.: US20120086054A1Publication Date: 2012-04-12
- Inventor: Tzyy-Ming Cheng , Meng-Chi Tsai , Tsai-Fu Chen , Ta-Kang Lo , Wen-Han Hung , Shih-Fang Tzou , Chun-Yuan Wu
- Applicant: Tzyy-Ming Cheng , Meng-Chi Tsai , Tsai-Fu Chen , Ta-Kang Lo , Wen-Han Hung , Shih-Fang Tzou , Chun-Yuan Wu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A semiconductor structure is disclosed. The semiconductor structure includes a gate structure disposed on a substrate, a source and a drain respectively disposed in the substrate at two sides of the gate structure, a source contact plug disposed above the source and electrically connected to the source and a drain contact plug disposed above the drain and electrically connected to the drain. The source contact plug and the drain contact plug have relatively asymmetric element properties.
Information query
IPC分类:
