发明申请
US20120049195A1 TRANSISTOR WITH ETCHING STOP LAYER AND MANUFACTURING METHOD THEREOF
有权
具有蚀刻停止层的晶体管及其制造方法
- 专利标题： TRANSISTOR WITH ETCHING STOP LAYER AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 具有蚀刻停止层的晶体管及其制造方法
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申请号： US13006580申请日： 2011-01-14
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公开(公告)号： US20120049195A1公开(公告)日： 2012-03-01
- 发明人: Chin-Wei Hu , Ching-Sang Chuang , Chia-Yu Chen
- 申请人： Chin-Wei Hu , Ching-Sang Chuang , Chia-Yu Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： AU OPTRONICS CORPORATION
- 当前专利权人： AU OPTRONICS CORPORATION
- 当前专利权人地址： TW Hsin-Chu
- 优先权： TW099129110 20100830
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
This invention provides a transistor with an etching stop layer and a manufacturing method thereof. The transistor structure includes a substrate, a crystalline semiconductor layer, an etching stop structure, an ohmic contact layer, a source, a drain, a gate insulating layer, and a gate. The manufacturing method is performed by patterning the ohmic contact layer and the crystalline semiconductor layer at the same time with the same mask; and patterning the ohmic contact layer and the source/drain layer at the same time with another the same mask.
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