Invention Application
- Patent Title: TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS
- Patent Title (中): 具有缓冲层的隧道式电磁感应传感器
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Application No.: US13152860Application Date: 2011-06-03
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Publication No.: US20110298456A1Publication Date: 2011-12-08
- Inventor: BIN Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
- Applicant: BIN Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Main IPC: G01R33/02
- IPC: G01R33/02
Abstract:
In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
Public/Granted literature
- US08922956B2 Tunneling magneto-resistive sensors with buffer layers Public/Granted day:2014-12-30
Information query
