发明申请
- 专利标题: SELECTING CHIPS WITHIN A STACKED SEMICONDUCTOR PACKAGE USING THROUGH-ELECTRODES
- 专利标题(中): 在使用电极的堆叠半导体封装中选择晶片
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申请号: US12981443申请日: 2010-12-29
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公开(公告)号: US20110272804A1公开(公告)日: 2011-11-10
- 发明人: Bok Gyu MIN , Kyoung Sook PARK , Da Un NAH
- 申请人: Bok Gyu MIN , Kyoung Sook PARK , Da Un NAH
- 申请人地址: KR Icheon-si
- 专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址: KR Icheon-si
- 优先权: KR10-2010-0042454 20100506
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A stacked semiconductor package includes first and second semiconductor chips including semiconductor chip bodies which have circuit units, first through-electrodes which pass through the semiconductor chip bodies at first positions, and second through-electrodes which pass through the semiconductor chip bodies at second positions and provide a chip enable signal to the circuit units. A spacer including a spacer body may be interposed between the first semiconductor chip and the second semiconductor chip, with an inverter chip embedded in the spacer body. Wiring patterns formed on the spacer body may connect the first through-electrodes of the first semiconductor chip with the second through-electrodes of the second semiconductor chip, the first through-electrodes of the first semiconductor chip with input terminals of the inverter chip, and output terminals of the inverter chip with the second through-electrodes of the first semiconductor chip.
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