发明申请
- 专利标题： FORTIFICATION OF CHARGE-STORING MATERIAL IN HIGH-K DIELECTRIC ENVIRONMENTS AND RESULTING APPRATUSES
- 专利标题（中）： 高K电介质环境中电荷储存材料的优化及其结果
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申请号： US12728697申请日： 2010-03-22
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公开(公告)号： US20110227142A1公开(公告)日： 2011-09-22
- 发明人: D.V. Nirmal Ramaswamy , Matthew N. Rocklein , Rhett Brewer
- 申请人： D.V. Nirmal Ramaswamy , Matthew N. Rocklein , Rhett Brewer
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/314 ; H01L21/28
摘要：
Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.
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