发明申请
US20110180793A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC DEVICE
有权
薄膜晶体管，制造薄膜晶体管的方法，显示单元和电子器件
- 专利标题： THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC DEVICE
- 专利标题（中）： 薄膜晶体管，制造薄膜晶体管的方法，显示单元和电子器件
-
申请号： US13006736申请日： 2011-01-14
-
公开(公告)号： US20110180793A1公开(公告)日： 2011-07-28
- 发明人: Satoshi Taniguchi
- 申请人： Satoshi Taniguchi
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-014339 20100126
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/336 ; H01L33/16
摘要：
There is provided a thin film transistor including: a gate electrode; a pair of source/drain electrodes; a first oxide semiconductor layer provided between the gate electrode, and the pair of source/drain electrodes, and forming a channel; and a second oxide semiconductor layer provided on the pair of source/drain electrodes side of the first oxide semiconductor layer, and having a polarity different from that of the first oxide semiconductor layer.
公开/授权文献
信息查询
IPC分类:
