发明申请
- 专利标题： Memory Cells
- 专利标题（中）： 记忆细胞
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申请号： US13024903申请日： 2011-02-10
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公开(公告)号： US20110133268A1公开(公告)日： 2011-06-09
- 发明人: Kyu S. Min , Rhett T. Brewer , Tejas Krishnamohan , Thomas M. Graettinger , D.V. Nirmal Ramaswamy , Ronald A. Weimer , Arup Bhattacharyya
- 申请人： Kyu S. Min , Rhett T. Brewer , Tejas Krishnamohan , Thomas M. Graettinger , D.V. Nirmal Ramaswamy , Ronald A. Weimer , Arup Bhattacharyya
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material may be present as a plurality of discrete isolated islands, such as nanodots. Some embodiments include methods of forming memory cells in which two charge-trapping zones are formed over tunnel dielectric, with the zones being vertically displaced relative to one another, and with the zone closest to the tunnel dielectric having deeper traps than the other zone. Some embodiments include electronic systems comprising memory cells. Some embodiments include methods of programming memory cells having vertically-stacked charge-trapping zones.
公开/授权文献
- US08228743B2 Memory cells containing charge-trapping zones 公开/授权日：2012-07-24
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