Invention Application
- Patent Title: BISTABLE RESISTANCE VALUE ACQUISITION DEVICE, MANUFACTURING METHOD THEREOF, METAL OXIDE THIN FILM, AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 耐电价值获取装置及其制造方法，金属氧化物薄膜及其制造方法
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Application No.: US12954316Application Date: 2010-11-24
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Publication No.: US20110097843A1Publication Date: 2011-04-28
- Inventor: Yoshito Jin , Hideaki Sakai , Masaru Shimada
- Applicant: Yoshito Jin , Hideaki Sakai , Masaru Shimada
- Priority: JP214849/2004 20040722; JP214851/2004 20040722; JP214858/2004 20040722; JP214863/2004 20040722; JP319088/2004 20041102; JP357429/2004 20041209; JP361152/2004 20041214; JP361199/2004 20041214; JP006254/2005 20050113; JP010202/2005 20050118; JP052655/2005 20050228; JP068839/2005 20050311; JP068853/2005 20050311; JP070723/2005 20050314; JP091097/2005 20050328; JP097714/2005 20050330; JP111756/2005 20050408
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).
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