发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12957231申请日： 2010-11-30
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公开(公告)号： US20110068393A1公开(公告)日： 2011-03-24
- 发明人: Heung-Jae CHO , Hong-Seon Yang , Se-Aug Jang
- 申请人： Heung-Jae CHO , Hong-Seon Yang , Se-Aug Jang
- 申请人地址： KR Ichon-shi
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Ichon-shi
- 优先权： KR10-2007-0045065 20070509
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers.
公开/授权文献
- US08410547B2 Semiconductor device and method for fabricating the same 公开/授权日：2013-04-02
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