发明申请
US20110049571A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE
有权
用于半导体器件的外延衬底，半导体器件及制造用于半导体器件的外延衬底的方法
- 专利标题： EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于半导体器件的外延衬底，半导体器件及制造用于半导体器件的外延衬底的方法
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申请号： US12855744申请日： 2010-08-13
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公开(公告)号： US20110049571A1公开(公告)日： 2011-03-03
- 发明人: Makoto MIYOSHI , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
- 申请人： Makoto MIYOSHI , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
- 申请人地址： JP Nagoya-City
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya-City
- 优先权： JP2009-198266 20090828
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/205 ; H01L21/20
摘要：
Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
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