发明申请
US20100230671A1 ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE
审中-公开
基于ZNO的半导体和基于ZNO的半导体器件
- 专利标题： ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE
- 专利标题（中）： 基于ZNO的半导体和基于ZNO的半导体器件
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申请号： US12680406申请日： 2008-09-26
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公开(公告)号： US20100230671A1公开(公告)日： 2010-09-16
- 发明人: Ken Nakahara , Shunsuke Akasaka , Hiroyuki Yuji , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
- 申请人： Ken Nakahara , Shunsuke Akasaka , Hiroyuki Yuji , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki
- 优先权： JP2007-251482 20070927
- 国际申请： PCT/JP2008/067516 WO 20080926
- 主分类号： H01L29/22
- IPC分类号： H01L29/22
摘要：
Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped MgXZn1-XO (0
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