Invention Application
US20100151150A1 PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER
审中-公开
沉积物制剂等离子体处理装置及制造方法
- Patent Title: PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER
- Patent Title (中): 沉积物制剂等离子体处理装置及制造方法
-
Application No.: US12600650Application Date: 2008-05-14
-
Publication No.: US20100151150A1Publication Date: 2010-06-17
- Inventor: Yutaka Kokaze , Masahisa Ueda , Mitsuhiro Endou , Koukou Suu , Toshiya Miyazaki , Genji Sakata , Toshiyuki Nakamura
- Applicant: Yutaka Kokaze , Masahisa Ueda , Mitsuhiro Endou , Koukou Suu , Toshiya Miyazaki , Genji Sakata , Toshiyuki Nakamura
- Applicant Address: JP Chigasaki-shi
- Assignee: ULVAC, INC.
- Current Assignee: ULVAC, INC.
- Current Assignee Address: JP Chigasaki-shi
- Priority: JPP2007-132631 20070518; JPP2007-146753 20070601
- International Application: PCT/JP2008/058850 WO 20080514
- Main IPC: C23C16/513
- IPC: C23C16/513
Abstract:
A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.
Information query
IPC分类:
