发明申请
US20100118587A1 RESISTIVE SENSE MEMORY ARRAY WITH PARTIAL BLOCK UPDATE CAPABILITY
有权
具有部分块更新能力的电阻式感知存储器阵列
- 专利标题: RESISTIVE SENSE MEMORY ARRAY WITH PARTIAL BLOCK UPDATE CAPABILITY
- 专利标题(中): 具有部分块更新能力的电阻式感知存储器阵列
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申请号: US12269564申请日: 2008-11-12
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公开(公告)号: US20100118587A1公开(公告)日: 2010-05-13
- 发明人: Yiran Chen , Daniel S. Reed , Yong Lu , Harry Hongyue Liu , Hai Li
- 申请人: Yiran Chen , Daniel S. Reed , Yong Lu , Harry Hongyue Liu , Hai Li
- 申请人地址: US CA Scotts Valley
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Scotts Valley
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C8/00 ; G11C11/416
摘要:
Various embodiments of the present invention are generally directed to a method and apparatus for carrying out a partial block update operation upon a resistive sense memory (RSM) array, such as formed from STRAM or RRAM cells. The RSM array is arranged into multi-cell blocks (sectors), each block having a physical block address (PBA). A first set of user data is written to a selected block at a first PBA. A partial block update operation is performed by writing a second set of user data to a second block at a second PBA, the second set of user data updating a portion of the first set of user data in the first PBA. The first and second blocks are thereafter read to retrieve the second set of user data and a remaining portion of the first set of user data.
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