发明申请
- 专利标题： NONVOLATILE MEMORY DEVICE AND MANUFACTURING PROCESS THEREOF
- 专利标题（中）： 非易失性存储器件及其制造工艺
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申请号： US12569489申请日： 2009-09-29
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公开(公告)号： US20100078616A1公开(公告)日： 2010-04-01
- 发明人: Akiyoshi Seko , Natsuki Sato , Isamu Asano
- 申请人： Akiyoshi Seko , Natsuki Sato , Isamu Asano
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-251167 20080929
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L21/20
摘要：
A nonvolatile memory device has a first insulating layer, a variable resistance layer provided on the first insulating layer and having a variable resistance material, and a first electrode and second electrode electrically connected with the variable resistance layer. The variable resistance layer has a variable resistance region as a data storing region and a thickness-changing region continuously extending from the variable resistance region and gradually becoming thicker from the variable resistance region.
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