发明申请
US20100003516A1 METHODS OF FABRICATING NANOSTRUCTURES AND NANOWIRES AND DEVICES FABRICATED THEREFROM
有权
制造纳米结构的方法和纳米结构及其制备的器件
- 专利标题: METHODS OF FABRICATING NANOSTRUCTURES AND NANOWIRES AND DEVICES FABRICATED THEREFROM
- 专利标题(中): 制造纳米结构的方法和纳米结构及其制备的器件
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申请号: US12488310申请日: 2009-06-19
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公开(公告)号: US20100003516A1公开(公告)日: 2010-01-07
- 发明人: Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
- 申请人: Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
- 申请人地址: US CA Oakand
- 专利权人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址: US CA Oakand
- 主分类号: B32B5/02
- IPC分类号: B32B5/02 ; B32B9/00 ; B32B15/00
摘要:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
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