发明申请
- 专利标题： METHOD TO REDUCE DISLOCATION DENSITY IN SILICON
- 专利标题（中）： 降低硅中偏差密度的方法
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申请号： US12358755申请日： 2009-01-23
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公开(公告)号： US20090184382A1公开(公告)日： 2009-07-23
- 发明人: Katherine Hartman , James Serdy , Tonio Buonassisi
- 申请人： Katherine Hartman , James Serdy , Tonio Buonassisi
- 主分类号： H01L31/036
- IPC分类号： H01L31/036 ; H01L21/34 ; H01L31/18
摘要：
A crystalline material structure is provided. The crystalline material structure includes a semiconductor structure being annealed at temperatures above the brittle-to-ductile transition temperature of the semiconductor structure, and cooled in an approximately linear time-temperature profile down to approximately its respective transition temperature T0.
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