发明申请
- 专利标题: Semiconductor Device
- 专利标题(中): 半导体器件
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申请号: US12243667申请日: 2008-10-01
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公开(公告)号: US20090116278A1公开(公告)日: 2009-05-07
- 发明人: Masashi Fujita , Yoshiyuki Kurokawa
- 申请人: Masashi Fujita , Yoshiyuki Kurokawa
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2005-220887 20050729
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A cache memory having valid bits, where a circuit configuration in a memory cell of a valid bit is improved so as to perform invalidation at high speed. The invention provides a cache memory including a memory cell that has a function to perform invalidation at high speed. One mode of the invention is a semiconductor device including a memory cell of a valid bit, where two inverters are connected in series to form a loop, a drain of an N-channel transistor is connected to an output signal line of one of the inverters, a gate thereof is connected to a reset signal line of a CPU, and a source thereof is connected to a ground line. The initial value of the memory cell is determined by inputting a reset signal of the CPU to the gate.
公开/授权文献
- US07782657B2 Semiconductor device 公开/授权日:2010-08-24
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