发明申请
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12005999申请日： 2007-12-28
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公开(公告)号： US20090059693A1公开(公告)日： 2009-03-05
- 发明人: Ji-Hyae Bae , Sang-Sik Yoon
- 申请人： Ji-Hyae Bae , Sang-Sik Yoon
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 优先权： KR2007-0088871 20070903
- 主分类号： G11C7/22
- IPC分类号： G11C7/22
摘要：
A semiconductor memory device includes: a data multiplexing unit configured to output one of a data training pattern and data transferred through a first global input/output line in response to a training control signal; and a latch unit configured to latch an output of the data multiplexing unit to apply and maintain the latched output to a second global input/output line.
公开/授权文献
- US08144527B2 Semiconductor memory device 公开/授权日：2012-03-27
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