发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12019945申请日： 2008-01-25
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公开(公告)号： US20090001583A1公开(公告)日： 2009-01-01
- 发明人: Cheol Mo Jeong , Whee Won Cho , Seung Hee Hong
- 申请人： Cheol Mo Jeong , Whee Won Cho , Seung Hee Hong
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2007-0065015 20070629
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/52
摘要：
The present invention relates to a semiconductor device and a method of fabricating the same. In an embodiment of the present invention, an insulating layer in which contact holes are formed is formed over a semiconductor substrate in which lower metal lines are formed. A barrier metal layer, having a stack structure of a first tungsten (W) layer and a tungsten nitride (WN) layer, is formed within the contact holes. Contact plugs are formed within the contact holes.
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