METHOD FOR MAKING AN INTERCONNECT STRUCTURE AND INTERCONNECT COMPONENT RECOVERY PROCESS

Invention Application

US20080318413A1 METHOD FOR MAKING AN INTERCONNECT STRUCTURE AND INTERCONNECT COMPONENT RECOVERY PROCESS 审中-公开

Title translation: 制造互连结构和互连组件恢复过程的方法

Please log in to see more content

Patent Title: METHOD FOR MAKING AN INTERCONNECT STRUCTURE AND INTERCONNECT COMPONENT RECOVERY PROCESS
Patent Title (中): 制造互连结构和互连组件恢复过程的方法
Application No.: US11766302

Application Date: 2007-06-21
Publication No.: US20080318413A1

Publication Date: 2008-12-25
Inventor: Raymond Albert Fillion , David Richard Esler , Jeffrey Scott Erlbaum , Ryan Christopher Mills , Charles Gerard Woychik
Applicant: Raymond Albert Fillion , David Richard Esler , Jeffrey Scott Erlbaum , Ryan Christopher Mills , Charles Gerard Woychik
Applicant Address: US NY Schenectady
Assignee: GENERAL ELECTRIC COMPANY
Current Assignee: GENERAL ELECTRIC COMPANY
Current Assignee Address: US NY Schenectady
Main IPC: H01L21/4763
IPC: H01L21/4763

METHOD FOR MAKING AN INTERCONNECT STRUCTURE AND INTERCONNECT COMPONENT RECOVERY PROCESS

Abstract:

A method is provided for making an interconnect structure. The method includes applying a removable layer to an electronic device or to a base insulative layer; applying an adhesive layer to the electronic device or to the base insulative layer; and securing the electronic device to the base insulative layer using the adhesive layer.

Abstract(Chinese):

提供了一种制造互连结构的方法。该方法包括将可移除层应用于电子设备或基底绝缘层; 将粘合剂层施加到电子装置或基底绝缘层上; 以及使用所述粘合剂层将所述电子器件固定到所述基底绝缘层。

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）