发明申请
US20080265278A1 Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device
失效
用于使用半导体器件驱动等离子体显示器的半导体器件和半导体集成电路器件
- 专利标题： Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device
- 专利标题（中）： 用于使用半导体器件驱动等离子体显示器的半导体器件和半导体集成电路器件
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申请号： US12103911申请日： 2008-04-16
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公开(公告)号： US20080265278A1公开(公告)日： 2008-10-30
- 发明人: Kenji Hara , Junichi Sakano , Shinji Shirakawa
- 申请人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
- 优先权： JP2007-108802 20070418
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; G09G5/00
摘要：
A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
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