METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Invention Application

US20080220574A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权

Title translation: 制造半导体器件的方法

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Patent Title: METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Patent Title (中): 制造半导体器件的方法
Application No.: US11681987

Application Date: 2007-03-05
Publication No.: US20080220574A1

Publication Date: 2008-09-11
Inventor: Li-Shian Jeng , Cheng-Tung Huang , Shyh-Fann Ting , Wen-Han Hung , Kun-Hsien Lee , Meng-Yi Wu , Tzyy-Ming Cheng
Applicant: Li-Shian Jeng , Cheng-Tung Huang , Shyh-Fann Ting , Wen-Han Hung , Kun-Hsien Lee , Meng-Yi Wu , Tzyy-Ming Cheng
Applicant Address: TW Hsinchu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: TW Hsinchu
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/336

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Abstract:

A method of fabricating a complementary metal oxide semiconductor (CMOS) device is provided. A first conductive type MOS transistor including a source/drain region using a semiconductor compound as major material is formed in a first region of a substrate. A second conductive type MOS transistor is formed in a second region of the substrate. Next, a pre-amorphous implantation (PAI) process is performed to amorphize a gate conductive layer of the second conductive type MOS transistor. Thereafter, a stress-transfer-scheme (STS) is formed on the substrate in the second region to generate a stress in the gate conductive layer. Afterwards, a rapid thermal annealing (RTA) process is performed to activate the dopants in the source/drain region. Then, the STS is removed.

Abstract(Chinese):

提供了制造互补金属氧化物半导体（CMOS）器件的方法。在衬底的第一区域中形成包括使用半导体化合物作为主要材料的源/漏区的第一导电型MOS晶体管。在基板的第二区域中形成第二导电型MOS晶体管。接下来，执行预非晶体注入（PAI）工艺以使第二导电型MOS晶体管的栅极导电层非晶化。此后，在第二区域中的基板上形成应力转移方案（STS），以在栅极导电层中产生应力。之后，进行快速热退火（RTA）处理以激活源极/漏极区域中的掺杂剂。然后，STS被删除。

Public/Granted literature

US07888194B2 Method of fabricating semiconductor device Public/Granted day:2011-02-15

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS