An electrically erasable programmable read-only memory (EEPROM) device includes an EEPROM cell located on a semiconductor substrate, the EEPROM cell including a memory transistor and a selection transistor. A source region and a drain region are located on the semiconductor substrate adjacent to opposite sides of the EEPROM cell, respectively, and a floating region is positioned between the memory transistor and the selection transistor. The source region includes a first doped region, a second doped region and a third doped region, where the first doped region surrounds a bottom surface and sidewalls of the second doped region, and the second doped surrounds a bottom surface and sidewalls of the third doped region. Also, a second impurity concentration of the second doped region is higher than that of the first doped region and lower than that of the third doped region.