Semiconductor thin film using self-assembled monolayers and methods of production thereof

Invention Application

US20070117279A1 Semiconductor thin film using self-assembled monolayers and methods of production thereof 有权

Title translation: 使用自组装单层的半导体薄膜及其制造方法

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Patent Title: Semiconductor thin film using self-assembled monolayers and methods of production thereof
Patent Title (中): 使用自组装单层的半导体薄膜及其制造方法
Application No.: US11417026

Application Date: 2006-05-03
Publication No.: US20070117279A1

Publication Date: 2007-05-24
Inventor: Hyeon Shin , Young Chung , Hyun Jeong , Sang Hyun , Jong Seon
Applicant: Hyeon Shin , Young Chung , Hyun Jeong , Sang Hyun , Jong Seon
Priority: KR2005-111745 20051122
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L27/148 ; H01L21/31

Semiconductor thin film using self-assembled monolayers and methods of production thereof

Abstract:

A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.

Abstract(Chinese):

提供了使用自组装单层（SAM）的半导体薄膜和制造半导体薄膜的方法。根据半导体薄膜，通过使用自组装单层形成均匀的无机种子层，使得绝缘层和半导体层之间的粘附性增强，因此表面张力降低，从而使半导体薄膜具有高质量无缺陷。

Public/Granted literature

US07633087B2 Semiconductor thin film using self-assembled monolayers and methods of production thereof Public/Granted day:2009-12-15

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体