Invention Application
- Patent Title: Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof
- Patent Title (中): 双稳态电阻值采集装置及其制造方法，金属氧化物薄膜及其制造方法
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Application No.: US10566522Application Date: 2005-07-21
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Publication No.: US20070107774A1Publication Date: 2007-05-17
- Inventor: Yoshito Jin , Hideaki Sakai , Masaru Shimada
- Applicant: Yoshito Jin , Hideaki Sakai , Masaru Shimada
- Applicant Address: DE Neumarkt D-02318
- Assignee: Pfleiderer Water Systmes GMBH
- Current Assignee: Pfleiderer Water Systmes GMBH
- Current Assignee Address: DE Neumarkt D-02318
- Priority: JP2004-214851 20040722; JP2004-214858 20040722; JP2004-214863 20040722; JP2004-214849 20040722; JP2004--319088 20041102; JP2004-357429 20041209; JP2004-361152 20041214; JP2004-361199 20041214; JP2005-006254 20050113; JP2005-010202 20050118; JP2005-052655 20050228; JP2005-068839 20050311; JP2005-068853 20050311; JP2005-070723 20050314; JP2005-091097 20050328; JP2005-097714 20050330; JP2005-111756 20050408
- International Application: PCT/JP05/13413 WO 20050721
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).
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