发明申请
- 专利标题: Potential Detector and Semiconductor Integrated Circuit
- 专利标题(中): 电位检测器和半导体集成电路
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申请号: US11558072申请日: 2006-11-09
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公开(公告)号: US20070085599A1公开(公告)日: 2007-04-19
- 发明人: Kenichi Imamiya
- 申请人: Kenichi Imamiya
- 申请人地址: JP Kawasaki-shi
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP2000-153660 20000524; JP2001-149496 20010518
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
An integrated semiconductor circuit has a potential detector for detecting a potential boosted by a high voltage generator. One terminal of a first capacitor is connected to a potential detection terminal via a first switching device, the other terminal thereof being connected to a reference potential terminal. A terminal of a second capacitor is connected, via a second switching device, to a first node at which the first switching device and the first capacitor are connected, the other terminal thereof being connected to the reference potential terminal. A third switch is connected between a second node at which the second switching device and the second capacitor are connected and the reference potential terminal. A clock generator generates clock signals to simultaneously and periodically turn on the first and the third switching devices whereas turn on the second switch periodically in an opposite timing for the first and the third switching devices. A comparator compares a potential at the second node with a reference potential and outputs a detection signal when a potential at the potential detection terminal reaches a predetermined potential.
公开/授权文献
- US07307466B2 Potential detector and semiconductor integrated circuit 公开/授权日:2007-12-11
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