Invention Application
- Patent Title: Pressure sensors and methods of making the same
- Patent Title (中): 压力传感器及其制作方法
-
Application No.: US11210309Application Date: 2005-08-24
-
Publication No.: US20070052046A1Publication Date: 2007-03-08
- Inventor: Stanley Chu , Sisira Gamage , Hyon-Jin Kwon
- Applicant: Stanley Chu , Sisira Gamage , Hyon-Jin Kwon
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.
Public/Granted literature
- US07622782B2 Pressure sensors and methods of making the same Public/Granted day:2009-11-24
Information query
IPC分类: