Invention Application
- Patent Title: Beam stop and beam tuning methods
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Application No.: US11445722Application Date: 2006-06-02
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Publication No.: US20060284071A1Publication Date: 2006-12-21
- Inventor: John Vanderpot , Yongzhang Huang
- Applicant: John Vanderpot , Yongzhang Huang
- Main IPC: B01D59/44
- IPC: B01D59/44

Abstract:
A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.
Public/Granted literature
- US07579604B2 Beam stop and beam tuning methods Public/Granted day:2009-08-25
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