发明申请
- 专利标题： Semiconductor memory device and method for manufacturing the same
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US11311841申请日： 2005-12-19
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公开(公告)号： US20060138506A1公开(公告)日： 2006-06-29
- 发明人: Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
- 申请人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 优先权： JP2004-380990 20041228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/94
摘要：
A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.
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