发明申请
US20060113616A1 Selective spacer layer deposition method for forming spacers with different widths
审中-公开
用于形成具有不同宽度的间隔物的选择性间隔层沉积方法
- 专利标题： Selective spacer layer deposition method for forming spacers with different widths
- 专利标题（中）： 用于形成具有不同宽度的间隔物的选择性间隔层沉积方法
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申请号： US11206613申请日： 2005-08-18
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公开(公告)号： US20060113616A1公开(公告)日： 2006-06-01
- 发明人: Ai-Sen Liu , Baw-Ching Perng , Ming-Ta Lei , Yih-Shung Lin , Cheng-Chung Lin , Chia-Hui Lin
- 申请人： Ai-Sen Liu , Baw-Ching Perng , Ming-Ta Lei , Yih-Shung Lin , Cheng-Chung Lin , Chia-Hui Lin
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.
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