发明申请
US20060109069A1 Planarized structure for a reliable metal-to-metal contact micro-relay mems switch
有权
平面化的结构,可靠的金属对金属接触微型继电器mems开关
- 专利标题: Planarized structure for a reliable metal-to-metal contact micro-relay mems switch
- 专利标题(中): 平面化的结构,可靠的金属对金属接触微型继电器mems开关
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申请号: US10993805申请日: 2004-11-20
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公开(公告)号: US20060109069A1公开(公告)日: 2006-05-25
- 发明人: Chia-Shing Chou
- 申请人: Chia-Shing Chou
- 主分类号: H01P1/10
- IPC分类号: H01P1/10
摘要:
A planarized substrate structure for an electromechanical device comprising a substrate layer; a dielectric layer formed on the substrate layer, the dielectric layer formed with conductor spaces therein, the dielectric layer further including a dielectric top surface; and a conducting layer formed as a set of conductors in the conductor spaces of the dielectric layer, the conducting layer having a conducting layer top surface, and where the dielectric top surface and the conducting layer top surface are formed in a substantially co-planar fashion to provide a planarized substrate structure.
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