Invention Application
- Patent Title: Copper interconnect structure with modulated topography and method for forming the same
- Patent Title (中): 具有调制形貌的铜互连结构及其形成方法
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Application No.: US10971460Application Date: 2004-10-22
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Publication No.: US20060099786A1Publication Date: 2006-05-11
- Inventor: Su-Chen Fan , Hsueh-Chung Chen
- Applicant: Su-Chen Fan , Hsueh-Chung Chen
- Assignee: Taiwan Semiconductor Manufacturing Co.
- Current Assignee: Taiwan Semiconductor Manufacturing Co.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A copper interconnect structure used in semiconductor devices includes surfaces having a surface roughness greater than 20 angstroms and which may be greater than 100 angstroms. The conformal surface of the copper interconnect structure confronts a surface roughened by ion bombardment. The copper interconnect structure is resistant to electromigration and stress migration failures.
Information query
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