A capacitor section is formed with a lower electrode provided on a SiO2 layer above an impurity layer provided in a substrate, a ferroelectric layer provided on the lower electrode, and an upper electrode provided on the ferroelectric layer. Further, the semiconductor device is equipped with a SiO2 layer that electrically insulates the upper electrode from a wiring, a first contact hole in which a W plug is formed for electrically connecting the impurity layer and the lower electrode, and a second contact hole for electrically connecting the upper electrode and the wiring. The first contact hole and the second contact hole are opened at positions mutually deviated as viewed in a plan view of the capacitor section.