发明申请
US20050205515A1 Process for producing structural body and etchant for silicon oxide film
有权
用于生产氧化硅膜结构体和蚀刻剂的方法
- 专利标题： Process for producing structural body and etchant for silicon oxide film
- 专利标题（中）： 用于生产氧化硅膜结构体和蚀刻剂的方法
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申请号： US11011111申请日： 2004-12-15
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公开(公告)号： US20050205515A1公开(公告)日： 2005-09-22
- 发明人: Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
- 申请人： Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
- 优先权： JP2003-423966 20031222
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; B81B3/00 ; B81C1/00 ; C09K13/08 ; H01L21/304 ; H01L21/308 ; H01L21/31 ; H01L29/84 ; H01L21/302 ; B44C1/22
摘要：
A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.
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