发明申请
- 专利标题： Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof
- 专利标题（中）： 等离子体处理装置，半导体制造装置及其使用的静电吸附装置
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申请号： US11064817申请日： 2005-02-25
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公开(公告)号： US20050183828A1公开(公告)日： 2005-08-25
- 发明人: Takamasa Tanikuni , Yasuhide Den
- 申请人： Takamasa Tanikuni , Yasuhide Den
- 申请人地址： JP KAWASAKI
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KAWASAKI
- 优先权： JP2004-050118 20040225
- 主分类号： C23C16/458
- IPC分类号： C23C16/458 ; C23C16/507 ; C23C16/513 ; C23F1/00 ; H01L21/00 ; H01L21/31 ; H01L21/683
摘要：
A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.
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