发明申请
- 专利标题: Method for forming pattern of one-dimensional nanostructure
- 专利标题(中): 形成一维纳米结构图案的方法
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申请号: US10876623申请日: 2004-06-28
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公开(公告)号: US20050023957A1公开(公告)日: 2005-02-03
- 发明人: Jin Kim , Chang Noh , Euk Hwang
- 申请人: Jin Kim , Chang Noh , Euk Hwang
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co.,Ltd.
- 当前专利权人: Samsung Electronics Co.,Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 优先权: KR2003-42875 20030628; KR2003-73339 20031021
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; H01J9/02 ; H01J9/04 ; H01J1/02 ; H01J9/12
摘要:
Disclosed herein are a method for forming a pattern of a one-dimensional nanostructure, and a pattern of a one-dimensional nanostructure formed by the method. The method comprises the steps of (i) coating a photocatalytic compound onto a substrate to form a photocatalytic film, and selectively exposing the photocatalytic film to light to form latent image centers for crystal growth, (ii) growing metal crystals by plating the latent pattern to form a metal pattern, and (iii) selectively growing a one-dimensional nanostructure on the metal pattern acting as a catalyst.
公开/授权文献
- US07067237B2 Method for forming pattern of one-dimensional nanostructure 公开/授权日:2006-06-27
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