发明申请
- 专利标题: Semiconductor memory device and control method thereof
- 专利标题(中): 半导体存储器件及其控制方法
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申请号: US10691413申请日: 2003-10-22
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公开(公告)号: US20040081006A1公开(公告)日: 2004-04-29
- 发明人: Hiroyuki Takahashi
- 申请人: NEC Electronics Corporation
- 申请人地址: null
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: null
- 优先权: JP2002-308624 20021023
- 主分类号: G11C007/00
- IPC分类号: G11C007/00
摘要:
A semiconductor device have memory cell array including a plurality of memory cells, each of which includes first and second transistors and connected in series between a bit line for normal access only and a bit line for refreshing only, and a capacitor connected to a connection node at which the first and second transistors are tied. A word line for normal access only and a word line for refreshing only are connected to control terminals of the first and second transistors, respectively. The semiconductor memory device has a late-write configuration in which writing to a memory cell at an externally input write address is performed, being delayed by a predetermined number of write cycles exceeding at least one, and has at least a circuit for checking whether the write address externally input the predetermined number of write cycles earlier matches the refresh address. If there is no hit as a check result, a write operation for activating the word line for normal access, turning on the first transistor, and writing data and a refresh operation for activating the word line for refreshing only, and refreshing using a sense amplifier for refreshing only, connected to the bit line for refreshing only are performed concurrently.
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