Invention Grant
- Patent Title: Semiconductor light emitting device having reflective electrode on multilayer insulating structure
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Application No.: US17711165Application Date: 2022-04-01
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Publication No.: US12284845B2Publication Date: 2025-04-22
- Inventor: Minkyun Kim , Donghyuk Joo , Inho Kim , Seungmi Son , Sungwook Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2021-0106263 20210811
- Main IPC: H10H20/841
- IPC: H10H20/841 ; H10H20/821 ; H10H20/832 ; H10H20/833 ; H10H20/857 ; H10H20/01

Abstract:
A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.
Public/Granted literature
- US20230047372A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2023-02-16
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