Invention Grant
- Patent Title: Chip containing an onboard non-volatile memory comprising a phase-change material
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Application No.: US18130184Application Date: 2023-04-03
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Publication No.: US12232435B2Publication Date: 2025-02-18
- Inventor: Franck Arnaud , David Galpin , Stephane Zoll , Olivier Hinsinger , Laurent Favennec , Jean-Pierre Oddou , Lucile Broussous , Philippe Boivin , Olivier Weber , Philippe Brun , Pierre Morin
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics (Grenoble 2) SAS , STMicroelectronics (Rousset) SAS
- Applicant Address: FR Crolles; FR Grenoble; FR Rousset
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics (Grenoble 2) SAS,STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics (Grenoble 2) SAS,STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Crolles; FR Grenoble; FR Rousset
- Agency: Crowe & Dunlevy LLC
- Priority: FR1760543 20171109
- Main IPC: H10B63/00
- IPC: H10B63/00 ; G11C13/00 ; H10N70/00 ; H10N70/20

Abstract:
An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.
Public/Granted literature
- US20230263082A1 CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-CHANGE MATERIAL Public/Granted day:2023-08-17
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