Invention Grant
- Patent Title: Method (and related apparatus) for forming a resistor over a semiconductor substrate
-
Application No.: US17412456Application Date: 2021-08-26
-
Publication No.: US12132075B2Publication Date: 2024-10-29
- Inventor: Hung-Wen Hsu , Jiech-Fun Lu , Li-Weng Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/311 ; H01L21/3213 ; H01L23/522 ; H01L23/528 ; H01L27/06 ; H01L49/02

Abstract:
Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a resistive structure overlying the substrate. The resistor also comprises a conductive contact overlying and electrically coupled to the resistive structure. A capping structure is disposed over the conductive contact, wherein the capping structure extends laterally over an upper surface of the conductive contact and vertically along a first sidewall of the conductive contact, such that a lower surface of the capping structure is disposed below a lower surface of the conductive contact.
Public/Granted literature
- US20230063793A1 METHOD (AND RELATED APPARATUS) FOR FORMING A RESISTOR OVER A SEMICONDUCTOR SUBSTRATE Public/Granted day:2023-03-02
Information query
IPC分类: