- 专利标题： Method of manufacturing semiconductor devices and semiconductor devices
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申请号： US17875277申请日： 2022-07-27
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公开(公告)号： US12132051B2公开(公告)日： 2024-10-29
- 发明人: Shahaji B. More , Chandrashekhar Prakash Savant
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： STUDEBAKER & BRACKETT PC
- 分案原申请号： US17184150 2021.02.24
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/8238 ; H01L27/092 ; H01L29/51
摘要：
A gate structure of a field effect transistor includes a first gate dielectric layer, a second gate dielectric layer, and one or more conductive layers disposed over the first gate dielectric layer and the second gate dielectric layer. The first gate dielectric layer is separated from the second gate dielectric layer by a gap filled with a diffusion blocking layer.
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