- 专利标题: Hybrid source drain regions formed based on same fin and methods forming same
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申请号: US17360135申请日: 2021-06-28
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公开(公告)号: US12119270B2公开(公告)日: 2024-10-15
- 发明人: Pei-Hsun Wang , Shih-Cheng Chen , Chun-Hsiung Lin , Chih-Hao Wang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US16515484 2019.07.18
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L27/092 ; H01L21/306 ; H01L21/3065
摘要:
A method includes forming an epitaxy semiconductor layer over a semiconductor substrate, and etching the epitaxy semiconductor layer and the semiconductor substrate to form a semiconductor strip, which includes an upper portion acting as a mandrel, and a lower portion under the mandrel. The upper portion is a remaining portion of the epitaxy semiconductor layer, and the lower portion is a remaining portion of the semiconductor substrate. The method further includes growing a first semiconductor fin starting from a first sidewall of the mandrel, growing a second semiconductor fin starting from a second sidewall of the mandrel. The first sidewall and the second sidewall are opposite sidewalls of the mandrel. A first transistor is formed based on the first semiconductor fin. A second transistor is formed based on the second semiconductor fin.
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