发明授权
- 专利标题: Deposition method
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申请号: US17845325申请日: 2022-06-21
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公开(公告)号: US12119228B2公开(公告)日: 2024-10-15
- 发明人: Chiyu Zhu , Henri Jussila , Qi Xie
- 申请人: ASM IP Holding B.V.
- 申请人地址: NL Almere
- 专利权人: ASM IP Holding B.V.
- 当前专利权人: ASM IP Holding B.V.
- 当前专利权人地址: NL Almere
- 代理机构: Snell & Wilmer L.L.P.
- 主分类号: C23C16/06
- IPC分类号: C23C16/06 ; C23C16/02 ; C23C16/04 ; C23C16/455 ; H01L21/285 ; H01L21/768
摘要:
A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.
公开/授权文献
- US20220328318A1 DEPOSITION METHOD 公开/授权日:2022-10-13
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